34 research outputs found

    Microwave response of bulk MgB2 samples of different granularity

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    The microwave response of three high-density bulk MgB2 samples has been investigated in the linear and nonlinear regimes. The three samples, characterized by different mean size of grains, have been obtained by reactive infiltration of liquid Mg in powdered B preforms. The linear response has been studied by measuring the microwave surface impedance; the nonlinear response by detecting the power radiated by the sample at the second-harmonic frequency of the driving field. Our results suggest that bulk MgB2 prepared by the liquid Mg infiltration technique is particularly promising for manufacturing resonant cavities operating at microwave frequencies.Comment: 4 pages, 2 embedded figures; Proceedings of 7th EUCAS Conference (11-15 September 2005, Vienna - Austria

    Microwave Response of V3Si Single Crystals: Evidence for Two-Gap Superconductivity

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    The investigation of the temperature dependences of microwave surface impedance and complex conductivity of V3Si single crystals with different stoichiometry allowed to observe a number of peculiarities which are in remarkable contradiction with single-gap Bardeen-Cooper-Schrieffer theory. At the same time, they can be well described by two-band model of superconductivity, thus strongly evidencing the existence of two distinct energy gaps with zero-temperature values Delta1~1.8Tc and Delta2~0.95Tc in V3Si.Comment: Submitted to Europhysics Letter

    Superfluid density in the underdoped YBa_2Cu_3O_{7-x}: Evidence for d-density wave order of pseudogap

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    The investigation of the penetration depth \lambda_{ab}(T,p) in YBa_2Cu_3O_{7-x} crystals allowed to observe the following features of the superfluid density n_s(T,p)\propto \lambda_{ab}^{-2}(T,p) as a function of temperature T<Tc/2 and carrier concentration 0.078\le p\le 0.16 in CuO_2 planes: (i) n_s(0,p) depends linearly on p, (ii) the derivative |dn_s(T,p)/dT|_{T\to 0} depends on p slightly in the optimally and moderately doped regions (0.10<p\le 0.16); however, it rapidly increases with p further lowering and (iii) the latter finding is accompanied by the linear low-temperature dependence [-\Delta n_s(T)]\propto T changing to [-\Delta n_s(T)]\propto \sqrt{T}. All these peculiarities can be treated in the framework of d-density wave scenario of electronic processes in underdoped high-Tc materials.Comment: 4 pages, 5 figures. To be published in Phys.Rev.Let

    Pseudogap in the microwave response of YBa_2Cu_3O_{7-x}

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    The in-plane and out-of-plane surface impedance and microwave conductivity components of one and the same YBa_2Cu_3O_{7-x} (0.07\le x\le 0.47) single crystal are determined in the wide ranges of temperature T and carrier concentration p in CuO_2 planes. The following features of the superfluid density n_s(T,p)\propto\lambda_{ab}^{-2}(T,p) are observed at T<Tc/2 and 0.078\le p\le 0.16: (i) n_s(0,p) depends linearly on p, (ii) the derivative |dn_s(T,p)/dT|_{T\to 0} depends on p slightly in the optimally and moderately doped regions (0.10<p\le 0.16); however, it rapidly increases with p further lowering and (iii) the latter finding is accompanied by the linear low-temperature dependence \Delta n_s(T)\propto(-T) changing to \Delta n_s(T)\propto(-\sqrt{T}). For optimum oxygen content the temperature dependence of the normalized imaginary part of the c-axis conductivity \lambda_c^2(0)/\lambda_c^2(T) is found to be strikingly similar to that of \lambda_{ab}^2(0)/\lambda_{ab}^2(T) and becomes more convex with p lowering. \lambda_c^{-2}(0,p) values are roughly proportional to the normal state conductivities \sigma_c(T_c,p) along the c-axis. All these properties can be treated in the framework of d-density wave order of pseudogap.Comment: 7 pages, 9 figures, presented at EUCAS 2003 (September 14-18), submitted to SUS

    Observation of microwave induced resistance and photovoltage oscillations in MgZnO/ZnO heterostructures

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    Microwave induced resistance and photovoltage oscillations were investigated in Mg_xZn_(1−x)O/ZnO heterostructures. The physics of these oscillations is controlled significantly by scattering mechanisms, and therefore these experiments were motivated by the recently achieved high quality levels in this material and the apparent dominance of large angle, short-range scattering, which is distinct from the prevailing small angle scattering in state-of-the-art GaAs structures. Within the studied frequency range of 35–120 GHz, up to four oscillations were resolved at 1.4 K temperature, but only in high density samples. This allowed us to extract the value of the effective electron mass m^∗ = (0.35 ± 0.01)m₀, which is enhanced over the bare band mass, and estimate a local quantum scattering time of about 5 ps

    Goldstone Mode Relaxation in a Quantum Hall Ferromagnet due to Hyperfine Interaction with Nuclei

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    Spin relaxation in quantum Hall ferromagnet regimes is studied. As the initial non-equilibrium state, a coherent deviation of the spin system from the B{\vec B} direction is considered and the breakdown of this Goldstone-mode state due to hyperfine coupling to nuclei is analyzed. The relaxation occurring non-exponentially with time is studied in terms of annihilation processes in the "Goldstone condensate" formed by "zero spin excitons". The relaxation rate is calculated analytically even if the initial deviation is not small. This relaxation channel competes with the relaxation mechanisms due to spin-orbit coupling, and at strong magnetic fields it becomes dominating.Comment: 8 page

    c-axis penetration depth in Bi2_2Sr2_2CaCu2_2O8+δ_{8+\delta} single crystals measured by ac-susceptibility and cavity perturbation technique

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    The cc-axis penetration depth Δλc\Delta\lambda_c in Bi2_2Sr2_2CaCu2_2O8+δ_{8+\delta} (BSCCO) single crystals as a function of temperature has been determined using two techniques, namely, measurements of the ac-susceptibility at a frequency of 100 kHz and the surface impedance at 9.4 GHz. Both techniques yield an almost linear function Δλc(T)T\Delta\lambda_c(T)\propto T in the temperature range T<0.5 T_c. Electrodynamic analysis of the impedance anisotropy has allowed us to estimate λc(0)50μ\lambda_c(0)\approx 50 \mum in BSCCO crystals overdoped with oxygen (Tc84T_c\approx 84 K) and λc(0)150μ\lambda_c(0)\approx 150 \mum at the optimal doping level (Tc90T_c\approx 90 K).Comment: 5 pages, 4 figure

    Observation of microwave induced resistance and photovoltage oscillations in MgZnO/ZnO heterostructures

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    Microwave induced resistance and photovoltage oscillations were investigated in Mg_xZn_(1−x)O/ZnO heterostructures. The physics of these oscillations is controlled significantly by scattering mechanisms, and therefore these experiments were motivated by the recently achieved high quality levels in this material and the apparent dominance of large angle, short-range scattering, which is distinct from the prevailing small angle scattering in state-of-the-art GaAs structures. Within the studied frequency range of 35–120 GHz, up to four oscillations were resolved at 1.4 K temperature, but only in high density samples. This allowed us to extract the value of the effective electron mass m^∗ = (0.35 ± 0.01)m₀, which is enhanced over the bare band mass, and estimate a local quantum scattering time of about 5 ps
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